Hall sensor devices and methods for operating the same

ABSTRACT

A Hall sensor device includes a Hall effect region of a first conductivity type, electrical contact regions configured to provide electrical signals to/from the Hall effect region, and circuitry. Each electrical contact region is formed in a respective well of a second conductivity type that adjoins the Hall effect region. Circuitry includes control terminals, wherein each control terminal is configured to control a conductance in an associated well of the second conductivity type. The circuitry is configured to selectively apply control signals to a first subset of the control terminals to form channels conducting majority carriers of the first conductivity type in the associated wells during a first operating phase, and to selectively apply control signals to a second subset of the control terminals to form channels conducting majority carriers of the first conductivity type in the associated wells during a second operating phase.

FIELD

Examples disclosed herein relate to operating Hall sensor devices usingspinning schemes. In particular, examples relate to Hall sensor devicesand methods for operating the same.

BACKGROUND

Hall sensor devices are semiconductor devices used to a measure magneticfield. They produce an output signal proportional to the magnetic field.At zero magnetic field, they tend to output a signal, which is usuallydifferent from zero: this is their offset error (i.e., zero fielderror).

Hall sensor devices comprise a Hall effect region where the Hall effecttakes place and three or more contacts in or in ohmic contact with theHall effect region. A contact may be understood as a contact tub locatedin or in touch with the Hall effect region. An electrical contact to theHall sensor region may be made by a contact diffusion or implantationprocess, for example. Sometimes several contacts can be connected viametal lines (in the interconnect layer of the semiconductor technology)to the same terminal. Terminals can be used to supply the device withelectric power and to tap its output signals.

Hall plates, which are also known as Horizontal Hall sensor devices orHHalls, are flat devices with thicknesses 5 to infinitely (typically 50)times smaller than their lateral size. They are used to detect magneticfield components along their thickness direction (i.e. the directioninto the semiconductor substrate). In silicon technology, Hall platesare currently typically 1 to 3 μm thick and 10 to 100 μm large inlateral directions. Their layout can be rectangular, square, circular,octagonal, cross-shaped, or even triangular.

Vertical Hall sensor devices or VHalls are stout devices where onelateral dimension is comparable (0.2 times up to 10 times) to theirthickness direction (i.e. direction into the semiconductor substrate).They often have the shape of long stripes, mostly straight, sometimescurved, arc-shaped, or even circular rings. They can be used to detectmagnetic field components parallel to the semiconductor main surface.

The terms “horizontal” and “vertical” denote the orientation of theplate-like geometry of the devices with respect to the main surface ofthe semiconductor die.

One approach for reducing or eliminating offset error is using amulti-contact Hall sensor. Three-contact or four-contact HHalls orVHalls may be operated in a spinning current-type mode, which changesthe supply or sense role of the contacts in multiple clock phases suchthat any offset is reduced when the signals from the multiple clockphases are combined. The residual offset generally depends on the supplyvoltage, at which the device is operated: with larger supply voltage theresidual offset grows. This is caused by self-heating and electricalnon-linearities of the devices, which are larger at larger supplyvoltages. In order to achieve low residual offset the devices need to beoperated at low supply voltage of e.g., 0.5V (instead of larger supplyvoltages of 2 to 3V). Even so, the residual offset error can remainhigher than desired, such as in the range of about 1 milli-Tesla (mT).

Hence, there may be a desire for operating Hall sensor devices withreduced residual offset error.

SUMMARY

Examples provided herein relate to Hall sensor devices and methods foroperating the same

An example relates to a Hall sensor device. The Hall sensor devicecomprises a Hall effect region of a first conductivity type, and aplurality of electrical contact regions configured to provide electricalsignals to/from the Hall effect region. Each electrical contact regionis formed in a respective well of a different second conductivity typewhich adjoins the Hall effect region. The Hall sensor device furthercomprises circuitry comprising a plurality of control terminals, whereineach control terminal is configured to control a conductance in anassociated well of the second conductivity type. The circuitry isconfigured to selectively apply control signals to a first subset of theplurality of control terminals to form channels conducting majoritycarriers of the first conductivity type in the associated wells during afirst operating phase. The circuitry is further configured toselectively apply control signals to a different second subset of theplurality of control terminals to form channels conducting majoritycarriers of the first conductivity type in the associated wells during asecond operating phase.

Another example relates to a further Hall sensor device. The Hall sensordevice comprises a Hall effect region of a first conductivity type whichis implemented in a semiconductor substrate, and a plurality ofelectrical contact regions which are implemented in the semiconductorsubstrate. The plurality of electrical contact regions are configured toprovide electrical signals to/from the Hall effect region. Further, theHall sensor device comprises a plurality of control terminals configuredto form during a first operating phase a first plurality of channels inthe semiconductor substrate between the Hall effect region and a firstsubset of the plurality of electrical contact regions. The channelsconduct majority carriers of the first conductivity type. The pluralityof control terminals are further configured to form during a secondoperating phase a second plurality of channels in the semiconductorsubstrate between the Hall effect region and a different second subsetof the plurality of electrical contact regions. Again, the channelsconduct majority carriers of the first conductivity type.

Still another example relates to a still further Hall sensor device. TheHall sensor device comprises a Hall effect region and a plurality ofelectrical contact regions. The plurality of electrical contact regionsare configured to provide electrical signals to/from the Hall effectregion. Further the Hall sensor device comprises circuitry configured toselectively couple a first subset of the plurality of electrical contactregions to the Hall effect region during at least one first operatingphase, and to selectively couple a different second subset of theplurality of electrical contact regions to the Hall effect region duringat least one second operating phase. Each of the second subset of theplurality of electrical contact regions exhibits a high ohmic boundarycondition to the Hall effect region during the first operating phase,and each of the first subset of the plurality of electrical contactregions exhibits a high ohmic boundary condition to the Hall effectregion during the second operating phase.

Hall sensor devices according to examples described herein may allow toselectively activate and deactivate single ones of the plurality ofelectrical contact regions. Activated electrical contact regions short apart of the electrical signal from the Hall effect region, or they shorta part of the electrical current flowing through the Hall effect region.Hence, a magnetic sensitivity of the Hall sensor device and aSignal-to-Noise Ratio (SNR) of the electrical signal from the Halleffect region may be increased since merely part of all the electricalcontact regions is activated during a respective operating phase.Furthermore, combining the electrical signals from the Hall effectregion provided by the electrical contact regions during the respectiveoperating phases may allow to provide an output signal of the Hallsensor device with reduced residual offset.

A further example relates to a method for operating a Hall sensor devicecomprising a Hall effect region of a first conductivity type and aplurality of electrical contact regions configured to provide electricalsignals to/from the Hall effect region using a plurality of controlterminals. Each electrical contact region is formed in a respective wellof a different second conductivity type which adjoins the Hall effectregion, and each control terminal is configured to control a conductancein an associated well of the second conductivity type. The methodcomprises selectively applying control signals to a first subset of theplurality of control terminals to form channels conducting majoritycarriers of the first conductivity type in the associated wells during afirst operating phase. The method further comprises selectively applyingcontrol signals to a different second subset of the plurality of controlterminals to form channels conducting majority carriers of the firstconductivity type in the associated wells during a second operatingphase.

A still further example relates to a method for a Hall sensor devicecomprising a Hall effect region. The method comprises supplying electricenergy to the Hall effect region using a first pair of electricalcontacts and tapping an output signal of the Hall effect region using asecond pair of electrical contacts in a first operating phase. In asecond operating phase, the method comprises supplying electric energyto the Hall effect region using the second pair of electrical contactsand tapping an output signal of the Hall effect region using the firstpair of electrical contacts. Further the method comprises supplyingelectric energy to the Hall effect region using a third pair ofelectrical contacts and tapping an output signal of the Hall effectregion using a fourth pair of electrical contacts in a third operatingphase. In a fourth operating phase, the method comprises supplyingelectric energy to the Hall effect region using the fourth pair ofelectrical contacts and tapping an output signal of the Hall effectregion using the third pair of electrical contacts. At least oneelectrical contact of the third and the fourth pair of electricalcontacts exhibits a high ohmic boundary condition to the Hall effectregion during the first operating phase, and at least one electricalcontact of the first and the second pair of electrical contacts exhibitsa high ohmic boundary condition to the Hall effect region during thesecond operating phase.

Methods according to examples described herein may allow to selectivelyactivate and deactivate single ones of the plurality of electricalcontact regions (electrical contacts) of a Hall sensor device.Accordingly, a magnetic sensitivity of the Hall sensor device and an SNRof the electrical signal from the Hall effect region may be increasedsince merely part of all the electrical contact regions (electricalcontacts) is activated during an operating phase. Furthermore, combiningthe electrical signals from the Hall effect region provided by theelectrical contact regions (electrical contacts) during the respectiveoperating phases may allow to provide an output signal of the Hallsensor device with reduced residual offset.

BRIEF DESCRIPTION OF THE DRAWINGS

Some examples of apparatuses and/or methods will be described in thefollowing by way of example only, and with reference to the accompanyingfigures, in which

FIG. 1 illustrates an example of a Hall sensor device according to oneor more embodiments;

FIG. 2 illustrates another example of a Hall sensor device according toone or more embodiments;

FIG. 3 illustrates still another example of a Hall sensor deviceaccording to one or more embodiments;

FIG. 4 illustrates a top view of the Hall sensor device illustrated inFIG. 3;

FIG. 5 illustrates an example of a contacting scheme for a Hall sensordevice according to one or more embodiments;

FIGS. 6a and 6b illustrate an example of a contacting scheme for a Hallsensor device for two consecutive spinning schemes according to one ormore embodiments;

FIGS. 7a to 7d illustrate an example of a contacting scheme for a Hallsensor device for four consecutive spinning schemes according to one ormore embodiments;

FIG. 8 illustrates a further example of a Hall sensor device accordingto one or more embodiments;

FIG. 9 illustrates a still further example of a Hall sensor deviceaccording to one or more embodiments;

FIG. 10 illustrates a flowchart of an example of a method for operatinga Hall sensor device according to one or more embodiments; and

FIG. 11 illustrates a flowchart of an example of a method for a Hallsensor device according to one or more embodiments.

DETAILED DESCRIPTION

Various examples will now be described more fully with reference to theaccompanying drawings in which some examples are illustrated. In thefigures, the thicknesses of lines, layers and/or regions may beexaggerated for clarity.

Accordingly, while further examples are capable of various modificationsand alternative forms, some particular examples thereof are shown in thefigures and will subsequently be described in detail. However, thisdetailed description does not limit further examples to the particularforms described. Further examples may cover all modifications,equivalents, and alternatives falling within the scope of thedisclosure. Like numbers refer to like or similar elements throughoutthe description of the figures, which may be implemented identically orin modified form when compared to one another while providing for thesame or a similar functionality.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, the elements may bedirectly connected or coupled or via one or more intervening elements.In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent”, to name just a few examples).

The terminology used herein is for the purpose of describing particularexamples is not intended to be limiting for further examples. Whenever asingular form such as “a,” “an” and “the” is used and using only asingle element is neither explicitly or implicitly defined as beingmandatory, further examples may also use plural elements to implementthe same functionality. Likewise, when a functionality is subsequentlydescribed as being implemented using multiple elements, further examplesmay implement the same functionality using a single element orprocessing entity. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when used,specify the presence of the stated features, integers, steps,operations, processes, acts, elements and/or components, but do notpreclude the presence or addition of one or more other features,integers, steps, operations, processes, acts, elements, componentsand/or any group thereof.

Unless otherwise defined, all terms (including technical and scientificterms) are used herein in their ordinary meaning of the art to which theexamples belong, unless expressly defined otherwise herein.

FIG. 1 illustrates a cross section of a Hall sensor device 100. The Hallsensor device 100 comprises a Hall effect region 110 of a firstconductivity type (e.g. n-doped), in which the Hall effect takes placewhen an external magnetic field (not illustrated) is present.

The Hall sensor device 100 further comprises a plurality of electricalcontact regions configured to provide electrical signals to/from theHall effect region (for this purpose, the electrical contact regions maybe coupled to respective terminals). For the sake of simplicity, merelytwo electrical contact regions 120-1 and 120-2 are illustrated. However,it is to be noted that any number of electrical contact regions may beprovided. For example, 2, 3, 4, 8, 16, 24, 32 or more electrical contactregions may be provided. Each electrical contact region is formed in arespective well of a different second conductivity type (e.g. p-doped)which adjoins the Hall effect region 110. For example, electricalcontact region 120-1 is formed in well 130-1 and electrical contactregion 120-2 is formed in well 130-2, wherein both wells 130-1 and 130-2adjoin the Hall effect region 110 (i.e. each well of the secondconductivity type shares a common boundary with the Hall effect region110). For example, at least one (or all) of the plurality of electricalcontact regions may be of the first conductivity type. Alternatively,one or more of the plurality of electrical contact regions may be formedby a metal contact.

The Hall sensor device 100 further comprises circuitry comprising aplurality of control terminals. For the sake of simplicity, again merelytwo control terminals 140-1 and 140-2 are illustrated. Each controlterminal is configured to control a conductance in an associated well ofthe second conductivity type. That is, the control terminal 140-1controls the conductance in well 130-1 and the control terminal 140-2controls the conductance in well 130-2. For example, a control terminalmay control the conductance in an associated well by controlling thespecific conductance of a channel which is formed in the well, or bycontrolling a geometrical change of a current path through the well.

In the example illustrated in FIG. 1, the control terminals 140-1 and140-2 are coupled to respective electrodes 142-1 and 142-2 (e.g. made oflow-ohmic poly-silicon) which are formed on respective oxide layers141-1 and 141-2. The oxide layers are formed on top of the wells of thesecond conductivity type. Accordingly, inversion layers at theinterfaces between the respective wells of the second conductivity typeand the oxide layers may be formed (depending on the potential at thecontrol terminals). Theses inversion layers serve as channels forconducting majority carriers of the first conductivity type. Hence, thecontrol terminals allow to control the specific conductance of channelsin the wells of the second conductivity type.

The circuitry is configured to selectively apply control signals to afirst subset of the plurality of control terminals to form channelsconducting majority carriers of the first conductivity type in theassociated wells during a first operating phase (e.g. by applying afirst potential to the respective control terminals). That is, at leastone of the plurality of control terminals is not comprised by the firstsubset. For example, the control terminal 140-1 may be comprised by thefirst subset of the plurality of control terminals. Hence, a controlsignal is applied to the control terminal 140-1 during the firstoperating phase. Accordingly, a channel 150-1 conducting majoritycarriers of the first conductivity type in the associated well 130-1 isformed. That is, an electrically conductive channel is formed betweenthe Hall effect region 110 and the electrical contact region 120-1during the first operating phase. Further, the control terminal 140-2may be not comprised by the first subset of the plurality of controlterminals, so that the control signal applied to the control terminal140-2 during the first operating phase (e.g. a different secondpotential) does not cause the formation of a channel conducting majoritycarriers of the first conductivity type in the associated well 130-2during the first operating phase. That is, no electrically conductivechannel is formed between the Hall effect region 110 and the electricalcontact region 120-2 during the first operating phase.

The circuitry is further configured to selectively apply control signalsto a different second subset of the plurality of control terminals toform channels conducting majority carriers of the first conductivitytype in the associated wells during a second operating phase (e.g. byapplying the first potential to the respective control terminals). Thatis, at least one of the control terminals of the second subset is notcomprised by the first subset of the plurality of control terminals. Forexample, the control terminal 140-2 may be comprised by the secondsubset of the plurality of control terminals. Hence, a control signal isapplied to the control terminal 140-2 during the second operating phase.Accordingly, a channel 150-2 conducting majority carriers of the firstconductivity type in the associated well 130-2 is formed. That is, anelectrically conductive channel is formed between the Hall effect region110 and the electrical contact region 120-2 during the second operatingphase. Further, the control terminal 140-1 may be not comprised by thesecond subset of the plurality of control terminals, so that the controlsignal applied to the control terminal 140-1 during the second operatingphase (e.g. the second potential) does not cause the formation of achannel conducting majority carriers of the first conductivity type inthe associated well 130-1 during the second operating phase. That is, noelectrically conductive channel is formed between the Hall effect region110 and the electrical contact region 120-1 during the second operatingphase.

Accordingly, single ones of the plurality of electrical contact regionsmay be selectively activated and deactivated. In general, an activatedelectrical contact region which is not used to supply an electricalsignal (e.g. a current signal or a voltage signal) to the Hall effectregion 110 or to tap an electrical signal from the Hall effect region110 (i.e. to tap an output signal) short circuits part of the electricalsupply signal (i.e. part of the current or voltage signal) or shortcircuits part of the output signal. Accordingly, the signal strength ofthe respective signals is decreased and the electrical field inside theHall effect region 110 is increased. The inhomogeneity of the electricalfield and the current/voltage distribution inside the Hall effect region110 is thus increased—leading to an increased residual offset of theHall sensor device. However, since controls signals are merely appliedto the first subset of the plurality of control terminals, merely afirst subset of the plurality of electrical contact regions is activatedduring the first operating phase. On the contrary, since controlssignals are merely applied to the second subset of the plurality ofcontrol terminals, merely a second subset of the plurality of electricalcontact regions is activated during the second operating phase. Hence,short circuiting of the electrical supply signal and short circuiting ofthe Hall effect region's output signal is reduced. The homogeneity ofthe electrical field and the current/voltage distribution inside theHall effect region may, thus, be increased, so that the residual offsetof the Hall sensor device 100 may be reduced compared to conventionalapproaches.

For example, the first operating phase may comprise a full firstspinning scheme, whereas the second operating phase may comprise a fullsecond spinning scheme. In a full spinning scheme, the supply or senserole of the activated electrical contact regions is changed in multipleclock phases: Each activated electrical contact region provides(supplies) an electrical signal to the Hall effect region 110 for aninteger number n of clock phases and provides (taps) an electricalsignal from the Hall effect region 110 for the same number n of clockphases. For example, in a spinning-current scheme with four activatedelectrical contact regions, a first and a second one of the fouractivated electrical contact regions supply a current signal to the Halleffect region 110 in a first clock phase, whereas a third and a fourthone of the four activated electrical contact regions tap the electricalsignal (i.e. a voltage signal) from the Hall effect region 110. In asecond clock phase, the third and fourth one of the four activatedelectrical contact regions supply the current signal to the Hall effectregion 110, whereas the first and the second one of the four activatedelectrical contact regions tap the electrical signal from the Halleffect region 110. Similarly, in the case of a spinning-voltage scheme,a voltage signal is supplied to the Hall effect region 110 instead of acurrent signal, and a current signal is tapped from the Hall effectregion instead of a voltage signal.

Since the electrical contract regions of the second subset of theplurality of contact regions are deactivated during the first spinningscheme, they do not short-circuit the electrical contract regions of thefirst subset of the plurality of contact regions. On the contrary, sincethe electrical contract regions of the first subset of the plurality ofcontact regions are deactivated during the second spinning scheme, theydo not short-circuit the electrical contract regions of the secondsubset of the plurality of contact regions. The homogeneity of theelectrical field and the current/voltage distribution inside the Halleffect region 110 may, thus, be increased for both spinning schemes.Accordingly, the residual offset of the Hall sensor device 100 may bereduced compared to conventional approaches—in particular if the outputsignals of the Hall effect region for both spinning schemes arecombined.

In some examples, the Hall sensor device 100 may, hence, furthercomprise combining circuitry (not illustrated) configured to combine theelectrical signals from the Hall effect region provided (tapped) byelectrical contact regions during the first operating phase and theelectrical signals from the Hall effect region provided (tapped) by theelectrical contact regions during the second operating phase. Thecombined electrical signals from the Hall effect region 110 may form anoutput signal of the Hall sensor device 100. For example, the combiningcircuitry may be configured to linearly combine the electrical signalsfrom the Hall effect region for both operating phases (e.g. bothspinning schemes). In particular, the electrical signals from the Halleffect region may be summed or subtracted from each other, wherein theabsolute value of the respective coefficients of the linear combinationis equal to one. Accordingly, the output signal of the Hall sensordevice 100 may exhibit reduced residual offset compared to conventionalapproaches.

The plurality of electrical contract regions may in some examples bearranged at a peripheral portion of the Hall effect region 110 asindicated in FIG. 1. This may be beneficial for the following reasons:If an asymmetry causing residual offset is located near the geometriccenter of the Hall effect region, it is rather irrelevant whichelectrical contract regions are used because this asymmetry is presentin all electrical contract region configurations at half of the supplypotentials due to a global symmetry of the arrangement. However, if anasymmetry is near one of the electrical contract regions, its effect onthe residual offset depends on whether the contact is at low or highpotential. That is, in one clock phase of a spinning scheme thiselectrical contract region is the high potential (current input) and inanother one it is the low potential (current output) and in two furtherones it is approximately at half of the supply potential because it is asense output. Due to non-linear effects in the semiconductor (e.g.velocity saturation, self-heating, depletion junction of a pn-isolationof the Hall effect region and charge modulation at dielectricallyisolated boundaries of the Hall effect region) an asymmetry close to anelectrical contract region leads to equivalent circuit resistordiagrams, which have slightly different resistance values in each clockphase (depending on the potential of the electrical contract region). Itis known that a spinning scheme achieves low residual offset merely whenthe equivalent circuit resistor diagrams have identical resistancevalues throughout all clock phases of the spinning scheme.Non-linearities change these resistance values during the various clockphases of the spinning scheme and lead to an increased residual offset.Hence, the Hall sensor device 100 is configured such that the electricalcontract regions are not fixed at specific positions at the perimeter ofthe Hall effect region 110. Instead they can be activated andde-activated at arbitrary positions.

In FIG. 2, another Hall sensor device 200 is illustrated. The Hallsensor device 200 is implemented in Metal Oxide Semiconductor (MOS)technology in a semiconductor substrate (e.g. a silicon substrate). TheHall sensor device 200 comprises a Hall effect region 110 in which theHall effect takes place. For example, the Hall effect region 110 may be0.5 to 5 μm deep (e.g. 1 μm). The Hall effect region 110 is of a firstconductivity type. In the example illustrated in FIG. 2, the Hall effectregion 110 is lightly n-doped silicon (e.g. 10¹⁵ to 10 ¹⁷ phosphorous orarsenic atoms per cm³) because the mobility of electrons is three timeslarger than the mobility of holes in silicon and the output of the Halleffect region 110 is proportional to the mobility. The n-doped Halleffect region 110 region may also be an n-doped CMOS well (which is usedfor logic PMOS transistors in CMOS technology).

The sidewalls and the bottom of the Hall effect region 110 are isolatedby a reverse biased pn-junction ring 260 and a reverse biasedpn-junction plate 261. This p-isolation regions 260, 270 are contactedto metal of the interconnect layer by a heavily doped shallow p+diffusion region 262 (e.g. 200 nm thickness) and are tied to a potentiallower or equal to the lowest potential in the Hall effect region 110.The top of the Hall effect region 110 is covered by a conductive region263 which is tied to a low potential (e.g. ground potential). In theexample of FIG. 2, the conductive region 263 is implemented by a metal-or poly-crystalline silicon plate, which is isolated from theHall-effect region by some thin dielectric layer 264. Alternatively ashallow p-doped tub above the n-doped Hall-effect region 110 may beused. However, the p-doped tub needs to be connected to a low potentiallike the p+ diffusion region 262.

The Hall sensor device further comprises a plurality of electricalcontact regions configured to provide electrical signals to/from theHall effect region 110. For the sake of simplicity, merely two contactregions C1 and C3 are illustrated. Each electrical contact region isformed in a respective well 130-1, 130-2 of a second conductivity typewhich adjoins the Hall effect region 110. Each electrical contact regionmay be activated or de-activated via a control signal (e.g. a controlvoltage) voltage at its gate (i.e. a control signal is received at aterminal coupled to the respective gate).

Between electrical contact region C1 and the n-doped Hall effect region110 a p-doped well 130-1 (i.e. a well of a second conductivity type) isformed—like the one of an NMOS-transistor. The terminal T1 is in ohmiccontact with the heavily doped shallow n+ diffusion region C1 (servingas electrical contact region). The region between the n+ diffusionregion C1 and the n-doped Hall effect region 110 is covered by gateoxide 265 (e.g. 10 nm thick) and by a gate terminal G1 (e.g. a low-ohmicpoly-silicon gate, optionally silicided). If the potential of theterminal G1 is at least a threshold voltage above the potential of thep-doped well 130-1, a conductive n-channel 150-1 is created via aninversion layer in the channel region. This channel connects theterminal C1 to the n-Hall-effect region—the contact C1 is active. Thatis, a channel conducting majority carriers of the first conductivitytype (n type, i.e., electrons) in the associated well 130-1 is created.If the potential at the terminal G1 is too low (i.e. lower than thethreshold voltage of this MOS-structure), no inversion layer is formed.Accordingly, the channel is not conductive (i.e. no channel conductingmajority carriers of the first conductivity type is formed) and theelectrical contact region C1 is not connected to the n-doped Hall effectregion 110—the electrical contact region C1 is de-activated. Thepotential of the p-doped well 130-1 (which is equivalent to a bulk of anNMOS-transistor) may, e.g., be controlled by connecting it to dedicatedterminals or by connecting it to the reverse biased pn-junction ring260. The boundary region between the p-doped well 130-1 and the n-dopedHall effect region 110 behaves like an isolating boundary if theelectrical contact region Cl is de-activated (i.e. when the potential atthe terminal G1 is low). If the electrical contact region Cl isactivated, the n-channel 150-1 is conductive, so that a shallow contactin the boundary region between the p-doped well 130-1 and the n-dopedHall effect region 110 is formed. The electrical contact region C1 isequivalent to a source contact of a NMOS-transistor. Hence, a singlestructure for contacting the Hall effect region 110 may be understood asan enhanced NMOS-transistor with the Hall effect region 110 being thedrain of the NMOS-transistor.

The above configuration is the same for the other structures forcontacting the Hall effect region 110—for example, for the structurecomprising the electrical contact region C3, its associated p-doped well130-2 and the terminal G3.

That is, a circuitry is formed which comprises a plurality of controlterminals (G1, . . . , G3, . . . ). Each control terminal is configuredto control a concentration of majority carriers of the firstconductivity type (n type) in an associated well of the secondconductivity type (p-doped wells). The circuitry is configured toselectively apply control signals to a first subset of the plurality ofcontrol terminals (e.g. G1 and G3) to form channels conducting majoritycarriers of the first conductivity type in the associated wells during afirst operating phase, and to selectively apply control signals to adifferent second subset of the plurality of control terminals (e.g. G2and G4—not illustrated) to form channels conducting majority carriers ofthe first conductivity type in the associated wells during a secondoperating phase.

Accordingly, the channels (e.g. 150-1, 150-2) conducting majoritycarriers of the first conductivity type in the associated wells duringthe first operating phase are formed between an associated first subsetof the plurality of electrical contact regions (e.g. C1 and C3) and theHall effect region 110, wherein the channels conducting majoritycarriers of the first conductivity type in the associated wells duringthe second operating phase are formed between an associated secondsubset of the plurality of electrical contact regions (e.g. C2 andC4—not illustrated) and the Hall effect region 110.

Single ones of the plurality of electrical contact regions may beselectively activated and deactivated. Since controls signals are merelyapplied to the first subset of the plurality of control terminals,merely a first subset of the plurality of electrical contact regions isactivated during the first operating phase. On the contrary, sincecontrols signals are merely applied to the second subset of theplurality of control terminals, merely a second subset of the pluralityof electrical contact regions is activated during the second operatingphase. Hence, short circuiting of the electrical supply signal and shortcircuiting of the Hall effect region's output signal is reduced. Thehomogeneity of the electrical field and the current/voltage distributioninside the Hall effect region may, thus, be increased, so that theresidual offset of the Hall sensor device 200 may be reduced compared toconventional approaches. Especially, when the Hall effect region'soutput signals for the first operating phase (e.g. a first spinningscheme) and the second operating phase (e.g. a second spinning scheme)are combined to generate the output signal of the Hall sensor device200.

Another Hall sensor device 300 is illustrated in FIG. 3. The structureof the Hall sensor device 300 is similar to the one of Hall sensordevice 200 illustrated in FIG. 2. However, the Hall sensor device 300further comprises a plurality of wells of the first conductivity type(e.g. tiny n-doped CMOS wells), each adjoining the Hall effect regionand an associated well of the second conductivity type. For the sake ofsimplicity, again, merely the two electrical contact regions Cl and C3and their associated p-doped wells 130-1 and 130-2 are illustrated. Asillustrated in FIG. 3, an n-doped well 370-1 may be arranged between amiddle portion of the n-doped Hall effect region 110 and a side portionof the p-doped well 130-1 encircling the electrical contact region C1.Similarly, an n-doped well 370-2 may be arranged between the middleportion of the n-doped Hall effect region 110 and a side portion of thep-doped well 130-2 holding the electrical contact region C3.

A concentration of majority carriers of the first conductivity type inthe wells 370-1 and 370-2 of the first conductivity type is higher thana concentration of majority carriers of the first conductivity type inthe Hall effect region 110. In other words, the exemplary n-doped well370-1 and 370-2 are higher doped then Hall effect region 110. Athickness of each well of the first conductivity type may be 50% or moreof a thickness of the Hall effect region 110. As illustrated in FIG. 3,the thickness of each well of the first conductivity type may, e.g., beequal to the thickness of the Hall effect region 110. The wells 370-1and 370-2 guide the electrical current from electrical contact region Clinto the Hall effect region 110. In this respect, the electrical currentshould not be crowded near the top surface of the device (where theMOS-channel is located), but the current should be homogeneousthroughout the thickness of the Hall effect region 110.

Again, a circuitry is formed which comprises a plurality of controlterminals G1, . . . , G3, etc. Each control terminal is configured tocontrol a concentration of majority carriers of the first conductivitytype (e.g. n type) in an associated well of the second conductivity type(e.g. p-doped wells). The circuitry is configured to selectively applycontrol signals to a first subset of the plurality of control terminals(e.g. G1 and G3) to form channels conducting majority carriers of thefirst conductivity type in the associated wells during a first operatingphase, and to selectively apply control signals to a different secondsubset of the plurality of control terminals (e.g. G2 and G4—notillustrated) to form channels conducting majority carriers of the firstconductivity type in the associated wells during a second operatingphase.

Accordingly, the channels conducting majority carriers (e.g. channel150-1) of the first conductivity type (e.g. n type) in the associatedwells of the second conductivity type (e.g. p-doped wells 130-1 and130-2) during the first operating phase are formed between an associatedfirst subset of the plurality of electrical contact regions (e.g. C1 andC3) and an associated subset of the plurality of wells of the firstconductivity type (e.g. n-doped well 370-1 and 370-2), wherein thechannels conducting majority carriers of the first conductivity type inthe associated wells of the second conductivity type during the secondoperating phase are formed between an associated second subset of theplurality of electrical contact regions (e.g. C2 and C4—not illustrated)and an associated second subset of the plurality of wells of the firstconductivity type (not illustrated).

If an electrical contact region is de-activated, its tiny n-doped CMOSwell (i.e. its associated well of the first conductivity type) isfloating. On the other hand, if the electrical contact region isactivated, the tiny n-doped CMOS well is connected via the n-channel tothe respective electrical contact region. Hence, it may contact the Halleffect region 110 along its entire thickness. If the tiny n-doped CMOSwell reaches through the entire depth of the Hall-effect region 110(i.e. its thickness is equal to a thickness of the Hall effect region110), it may reduce the electrical field and the current density when anelectrical contact region is activated and current is flowing over itcompared to a configuration without the tiny n-doped CMOS well. Hence,the tiny n-doped CMOS well may reduce electrical non-linearities of theHall sensor device 300. Accordingly, a residual offset of the outputsignal of the Hall effect region 110 may be reduced. Especially, whenthe Hall effect region's output signals for the first operating phase(e.g. a first spinning scheme) and the second operating phase (e.g. asecond spinning scheme) are combined to generate the output signal ofthe Hall sensor device 300.

If the Hall effect region 110 is an n-CMOS-well, no deep tub with highern-doping may be formed, so that the Hall effect region 110 may be eithercontacted by small shallow highly doped n+ diffusions or the channelregion may enter the n-doped Hall-effect region 110 directly.

A top view of the Hall sensor device 300 of FIG. 3 is illustrated inFIG. 4. For the sake of clarity, the top plate 263 is not illustrated.Twelve electrical contact regions C1, . . . , C12 of a firstconductivity type (n-type) are formed in a common well 130 of a secondconductivity type (p-type). Wherein the portions of the common well 130surrounding a respective electrical contact region form an associatedwell portion for the electrical contact region, which may be understoodas respective well of the second conductivity type for the respectiveelectrical contact region. Alternatively, the common well 130 of thesecond conductivity type may be split up into several parts, whereineach part encircles one or more channels conducting majority carriers ofthe first conductivity type. The common well 130 adjoins the Hall effectregion 110. Twelve wells 370-1, . . . , 370-12 of the first conductivitytype (n-type) are formed, each adjoining the Hall effect region 110 andan associated well portion of the second conductivity type. Further,twelve control terminals G1, . . . , G12 are formed to control aconcentration of majority carriers of the first conductivity type in anassociated well portion of the second conductivity type.

During a first operating phase (e.g. a first spinning scheme), controlsignals are selectively applied to a first subset of the plurality ofcontrol terminals G1, . . . , G12 to form channels conducting majoritycarriers of the first conductivity type in the associated well portions.For example, control signals may be applied to the control terminals G1,G2, G3 and G4 to form n-conducting channels in associated well portionsbetween the electrical contact regions C1, C2, C3 and C4, and the wells370-1, 370-2, 370-3 and 370-4, respectively. Hence, a current or avoltage signal may be applied to the Hall effect region 110 during thefirst operating phase as well as an output signal of the Hall effectregion 110 may be tapped from the Hall effect region 110 using theelectrical contact regions C1, C2, C3 and C4.

During a second operating phase (e.g. a second spinning scheme), controlsignals are selectively applied to a different second subset of theplurality of control terminals G1, . . . , G12 to form channelsconducting majority carriers of the first conductivity type in theassociated well portions. For example, control signals may be applied tothe control terminals G5, G6, G7 and G8 to form n-conducting channels inassociated well portions between the electrical contact regions C5, C6,C7 and C8, and the wells 370-5, 370-6, 370-7 and 370-8, respectively.Hence, a current or a voltage signal may be applied to the Hall effectregion 110 during the second operating phase as well as an output signalof the Hall effect region 110 may be tapped from the Hall effect region110 using the electrical contact regions C5, C6, C7 and C8.

Since merely fractions of the plurality of electrical contact regionsC1, . . . , C12 are activated during both operating phases, shortcircuiting of the electrical supply signal and short circuiting of theHall effect region's output signal is reduced. The homogeneity of theelectrical field and the current/voltage distribution inside the Halleffect region 100 may, thus, be increased, so that the residual offsetof the Hall sensor device 300 may be reduced compared to conventionalapproaches. Especially, when the Hall effect region's output signals forthe first operating phase and the second operating phase are combined togenerate the output signal of the Hall sensor device 300. The wells370-1, . . . , 370-12 may reduce electrical nonlinearities of the Hallsensor device 300. Accordingly, a residual offset of the output signalof the Hall effect region 110 may be further reduced.

FIG. 5 illustrates an example of a contacting scheme for a Hall sensordevice 500. The Hall sensor device 500 comprises an n-doped Hall effectregion 110 which is octagonal. Moreover, the Hall sensor device 500comprises twenty-four NMOS-activated electrical contact regions C1, . .. , C24 with respective terminals T1, . . . , T24. The electricalcontact regions are distributed evenly along the perimeter of the Hallsensor device 500. Each electrical contact region C1, . . . , C24 hasits own gate terminal G1, . . . , G24 (i.e. a control terminal), so thatit can be switched on and off individually. Logic circuitry controls theactivation/deactivation of the individual gate terminal G1, . . . , G24which act as switches for connecting the electrical contact region C1, .. . , C24 to the Hall effect region 110.

If a certain switch is on, three other switches are also on. Thelocations of the electrical contact regions associated to theseactivated switches are rotated by 90°, 180°, and 270° around the centerof the Hall-effect region with respect to the locations of theelectrical contact region associated to a first one of the switches. Inother words, the electrical contact regions of a first subset of theplurality of electrical contact regions are rotated by 90° with respectto each other about a geometrical center of the Hall effect region 110.For example, if gate terminal G1 is on, also gate terminals G7, G13 andG19 are on. Accordingly, terminals T1, T7, T13 and T19 are coupled tothe Hall effect region 110. If, for example, gate terminal G5 is at highpotential (i.e. the MOS-channel is activated), also gate terminals G11,G17 and G23 are at high potential. Accordingly, terminals T5, T11, T17and T23 are coupled to the Hall effect region 110.

If a certain gate terminal (switch) is used to supply the Hall effectregion 110 with electrical energy, also its diametrically opposite gateterminal (switch) is activated to supply the device with electricalenergy. For example, if terminal T1 is used to supply (inject) a currentto the Hall effect region 110, terminal T13 is used to extract thecurrent. Accordingly, gate terminals G1 and G13 are activated. If, forexample, terminal T2 is connected to a positive (i.e. high supply)voltage, terminal T14 is connected to a negative (i.e. low supply)voltage. Accordingly, gate terminals G2 and G14 are activated.

If a certain gate terminal (switch) is used to tap an output signal fromthe Hall effect region 110, also its diametrically opposite gateterminal (switch) is activated to tap an output signal. For example, ifterminal T1 is connected to a non-inverting input of a voltmeter readoutcircuit, then also terminal T13 is connected to an inverting input of avoltmeter readout circuit (possibly but not necessarily the samevoltmeter readout circuit). Accordingly, gate terminals G1 and G13 areactivated. If terminal T2 is connected to a non-inverting input of anampere meter readout circuit, then also terminal T14 is connected to aninverting input of an ampere meter readout circuit (possibly but notnecessarily the same ampere meter readout circuit). Accordingly, gateterminals G2 and G14 are activated.

If the Hall effect region 110 is supplied with electrical energy by acurrent source through a first pair of activated diametrically oppositeelectrical contact regions (via associated activated gate terminals),its output signal is read out by a voltmeter circuit connected to asecond pair of the activated diametrically opposite electrical contactregions (via associated activated gate terminals).

If the device is supplied with electrical energy by a voltage sourcethrough a first pair of activated diametrically opposite electricalcontact regions (via associated activated gate terminals), its outputsignal is read out by an ampere meter circuit connected to a second pairof the activated diametrically opposite electrical contact regions (viaassociated activated gate terminals).

Several terminals may be combined to a terminal. For example, ifterminals T1, T2 and T3 are used for current injection, they may beconnected to the same current source. Alternatively, each one of themmay be connected to an individual current source. For example, ifterminals T1, T2 and T3 are used as ground potential, they may beconnected to the same ground node. Alternatively, each of them may beconnected to an individual ground node. For example, if terminals T1, T2and T3 are used as voltage output terminals, they may be connected tothe same non-inverting input terminal of a voltmeter circuit.Alternatively, each of them may be connected individually to its owndedicated non-inverting input terminal of a voltmeter circuit. Here areagain two cases: three non-inverting input terminals of a singlevoltmeter circuit may be provided, or non-inverting input terminals ofthree different voltmeter circuits may be provided.

That is, a large number of MOS-switched electrical contact regions mayresult in a large number of possible operating modes. This may becomecomplex, so that a large number of signal lines to all gate terminalsacting as switches for the electrical contact regions, and to furtherswitches that connect the electrical contact regions to the supplysources and readout circuits may be required. Various kinds ofpartitioning for controlling these operation modes may be used. Forexample, a single large logic block may control all gate terminals andswitches, or it may control only clusters of gate terminals and switcheswhich may then be controlled by local logic units (e.g. a signal busfrom the central logic can control a couple of gate terminals which aredecoded by a local logic unit close to these gate terminals, in order tominimize the space consumption of signal lines). Similarly, auxiliaryswitches may be added to selectively short-circuit an electrical contactregion with one of its neighboring electrical contact regions. This mayallow to cluster several deactivated electrical contact regions orseveral activated electrical contact regions to a single one (e.g.several electrical contact regions are connected together via auxiliaryswitches and only one of these electrical contact regions is directlyconnected to the supply or the voltmeter—this may increase theresistance at the gate terminals for some electrical contact regions,but it reduces complexity).

An example of a contacting scheme a Hall sensor device 600 for twoconsecutive spinning schemes is illustrated in FIGS. 6a and 6 b.

FIG. 6a illustrates the contacting scheme during the first spinningscheme. The Hall sensor device 600 comprises a Hall effect region 110and a plurality of electrical contract regions C1, . . . , C8. The Halleffect region 110 is of a first conductivity type. The Hall effectregion 110 is illustrated as circular element. However, the Hall effectregion 110 may have other shapes like a square, a cross, an octagon, ora clover leave. The electrical contact regions are formed in respectivewells of a second conductivity type which adjoin the Hall effect region110, respectively.

In the first spinning scheme, a first subset of the plurality ofelectrical contact regions is coupled to the Hall effect region 110,e.g., the electrical contact regions C1, C2, C3 and C4. The electricalcontact regions of the first subset of the plurality of electricalcontact regions are rotated by 90° with respect to each other about ageometrical center X of the Hall effect region 110. For connectingsingle ones of the plurality of electrical contact regions, the Hallsensor device 600 comprises circuitry comprising a plurality of controlterminals (not illustrated). Each control terminal controls aconcentration of majority carriers of the first conductivity type in anassociated well of the second conductivity type. In the first spinningscheme, the circuitry selectively applies control signals to a firstsubset of the plurality of control terminals to form channels conductingmajority carriers of the first conductivity type in the associatedwells. That is control signals are applied to control terminalsassociated to electrical contact regions C1, C2, C3 and C4 in order toform channels conducting majority carriers of the first conductivitytype in the wells of the second conductivity type that are associated tothe electrical contact regions C1, C2, C3 and C4.

The four electrical contact regions C1, C2, C3 and C4 may, e.g., behomogeneous (i.e. non-interleaving), equally sized and symmetricallydistributed near the perimeter of the Hall effect region 110. A firstcomplete spinning scheme is applied to these contacts. For example,electric energy (e.g. from a current or a voltage source) is supplied tothe Hall effect using the electrical contact regions C1 and C3 while anoutput signal of the Hall effect region 110 is tapped using theelectrical contact regions C2 and C4 in a first phase of the firstspinning scheme. Then, electric energy is supplied to the Hall effectregion 110 using the electrical contact regions C2 and C4 while anoutput signal of the Hall effect region 110 is tapped using theelectrical contact regions C1 and C3 in a consecutive second phase ofthe first spinning scheme. After finishing the first spinning scheme,the four electrical contact regions C1, C2, C3 and C4 are de-activatedby the circuitry (i.e. they are switched high ohmic).

In the second spinning scheme, a second subset of the plurality ofelectrical contact regions is coupled to the Hall effect region 110,e.g., the electrical contact regions C5, C6, C7 and C8 as illustrated inFIG. 6b . Also the electrical contact regions of the second subset ofthe plurality of electrical contact regions are rotated by 90° withrespect to each other about a geometrical center X of the Hall effectregion 110. In the second spinning scheme, the circuitry selectivelyapplies control signals to a second subset of the plurality of controlterminals to form channels conducting majority carriers of the firstconductivity type in the associated wells. That is control signals areapplied to control terminals associated to electrical contact regionsC5, C6, C7 and C8 in order to form channels conducting majority carriersof the first conductivity type in the wells of the second conductivitytype that are associated to the electrical contact regions C5, C6, C7and C8.

The four electrical contact regions C5, C6, C7 and C8 may, e.g., behomogeneous, of equal size and symmetrically distributed near theperimeter of the Hall effect region 110. Each electrical contact regionof the second subset of the plurality of electrical contact regions isarranged between two electrical contact regions of the first subset ofthe plurality of electrical contact regions, respectively. For example,electrical contact region C5 of the second subset is arranged betweenelectrical contact regions C1 and C2 of the first subset. It is evidentfrom FIGS. 6a and 6b that none of the plurality of control terminalscomprised by the first subset is comprised by the second subset. Asindicated in FIGS. 6a and 6b , the plurality of electrical contactregions may be of different size. Alternatively, the plurality ofelectrical contact regions may be equal in size.

A second complete spinning scheme is applied to the four electricalcontact regions C5, C6, C7 and C8. For example, electric energy (e.g.from a current or a voltage source) is supplied to the Hall effect usingthe electrical contact regions C5 and C7 while an output signal of theHall effect region 110 is tapped using the electrical contact regions C6and C8 in a first phase of the second spinning scheme. Then, electricenergy is supplied to the Hall effect region 110 using the electricalcontact regions C6 and C8 while an output signal of the Hall effectregion 110 is tapped using the electrical contact regions C5 and C7 in aconsecutive second phase of the second spinning scheme.

The output signals of the first and the second complete spinning schemesare combined (e.g. added up or averaged) by combining circuitry (notillustrated) to give an overall output signal of the Hall sensor device600. The combined output signal of the Hall sensor device 600 may have alower residual offset than the individual output signals of the Halleffect region 110 for the first and the second spinning scheme.

It is to be noted that the parts of the Hall effect region's boundary,which are shorted together by the electrical contact regions C1, C2, C3and C4 during the first spinning scheme, are isolating boundaries duringthe second spinning scheme. That is, during a respective spinning schememerely four (homogeneous) electrical contact regions are effectivelypresent and the other contacts are effectively absent.

Merely the first subset of the plurality of electrical contact regionsC1, C2, C3 and C4 is activated during the first spinning scheme, whereasmerely the second subset of the plurality of electrical contact regionsC5, C6, C7 and C8 is activated during the second spinning scheme. Hence,short circuiting of the electrical supply signal and short circuiting ofthe Hall effect region's output signal is reduced. The homogeneity ofthe electrical field and the current/voltage distribution inside theHall effect region may, thus, be increased, so that the residual offsetof the Hall sensor device 600 may be reduced compared to conventionalapproaches.

As indicated in FIGS. 6a and 6b , the plurality of electrical contactregions may be arranged along a large part of the Hall effect region'speriphery. For example, the plurality of electrical contact regions maybe arranged along at least 75%, 80%, 85%, 90%, 95%, or more of the Halleffect region's periphery.

The operation of a Hall sensor device according to the proposed conceptor examples illustrated herein may further be extended by a third,fourth, fifth, etc. spinning scheme where further contacts areactivated. An example of a contacting scheme for a Hall sensor device700 for four consecutive spinning schemes is illustrated in FIGS. 7a to7 d.

The Hall sensor device 700 illustrated in FIG. 7a comprises a Halleffect region 110 and a plurality of electrical contacts C1, . . . ,C16. In the first spinning scheme a first subset of the plurality ofelectrical contacts is coupled to the Hall effect region 110, i.e., theelectrical contacts C1, C2, C3 and C4.

In the second spinning scheme a second subset of the plurality ofelectrical contacts is coupled to the Hall effect region 110, i.e., theelectrical contacts C5, C6, C7 and C8 as illustrated in FIG. 7 b.

In the third spinning scheme a third subset of the plurality ofelectrical contacts is coupled to the Hall effect region 110, i.e., theelectrical contacts C9, C10, C11 and C12 as illustrated in FIG. 7 c.

In the fourth spinning scheme a fourth subset of the plurality ofelectrical contacts is coupled to the Hall effect region 110, i.e., theelectrical contacts C13, C14, C15 and C16 as illustrated in FIG. 7 d.

In this way the electrical contacts can be large and move in small stepsover the complete perimeter: For example, electrical contact Cl in thefirst spinning scheme may be rotated clockwise by 10° to becomeelectrical contact C5 in the second spinning scheme. Electrical contactC5 in the second spinning scheme may then again be rotated about thecenter X of the Hall effect region 110 along its perimeter by 10° tobecome electrical contact C9 in the third spinning scheme. Electricalcontact C9 in the third spinning scheme may then be rotated clockwise by10° to become electrical contact C13 in the fourth spinning scheme.

This may allow to average non-linear effects in the Hall effect region110 caused by inhomogeneities near the electrical contacts over all thespinning schemes. One efficient way to achieve these slowly rotatingelectrical contacts is to split up each electrical contact into a numberof small electrical contacts—in the above example each small contactcovers, e.g., 10° or less (e.g. the small contacts cover 8° each and arespaced apart from each other by 2°). For example, several electricalcontact regions may be combined to one single electrical contact. Thecircuitry may, e.g., activate electrical contact regions m, m+1, m+2, .. . , m+n (being part of a first subset of electrical contact regions)in the first spinning scheme and connect them together to electricalcontact C1. In the second spinning scheme the circuitry may, e.g.,activate electrical contact regions m+1, m+2, . . . , m+n, m+n+1 (beingpart of a second subset of electrical contact regions) and connect themtogether to electrical contact C5. That is, at least one of theplurality of control terminals comprised by the first subset may becomprised by the second subset. On the contrary, at least one of theplurality of control terminals comprised by the first subset is notcomprised by the second subset. In the first spinning scheme theelectrical contact regions m−1 and m+n+1 are de-activated—i.e. they areeffectively absent—whereas in the second spinning scheme electricalcontact regions m and m+n+2 are de-activated.

Similarly, third and fourth subsets of the plurality of electricalcontact regions may be selected for the third and fourth spinningschemes and be combined to electrical contacts.

That is, the electrical contacts of the first, the second, the third andthe fourth complete spinning scheme may partly overlap.

In FIG. 8, a cross section of another Hall sensor device 800 isillustrated. The Hall sensor device 800 comprises a Hall effect region810 of a first conductivity type (e.g. n-doped) which is implemented ina semiconductor substrate 860. In the Hall effect region 810 the Halleffect takes place when an external magnetic field (not illustrated) ispresent.

The Hall sensor device 800 further comprises a plurality of electricalcontact regions configured to provide electrical signals to/from theHall effect region 810. For this purpose, the electrical contact regionsmay, e.g., be coupled to respective terminals (not illustrated). For thesake of simplicity, merely two electrical contact regions 820-1 and820-2 are illustrated. However, it is to be noted that any number ofelectrical contact regions may be provided. For example, 2, 3, 4, 8, 16,24, 32 or more electrical contact regions may be provided. Theelectrical contact regions may, e.g., be formed in respective wells of adifferent second conductivity type (e.g. p-doped) which adjoin the Halleffect region 810. For example, electrical contact region 820-1 may beformed in well 830-1 and electrical contact region 820-2 may be formedin well 830-2, wherein both wells 830-1 and 830-2 adjoin the Hall effectregion 810 (i.e. each well of the second conductivity type shares acommon boundary with the Hall effect region 810). For example, at leastone (or all) of the plurality of electrical contact regions may be ofthe first conductivity type. Alternatively, one or more of the pluralityof electrical contact regions may be formed by a metal contact.

The Hall sensor device 800 further comprises circuitry comprising aplurality of control terminals. For the sake of simplicity, again merelytwo control terminals 840-1 and 840-2 are illustrated. The plurality ofcontrol terminals are configured to form during a first operating phase(e.g. a first spinning scheme) a first plurality of channels in thesemiconductor substrate 860 (directly) between the Hall effect region810 and a first subset of the plurality of electrical contact regions(e.g. by applying a first potential to the respective controlterminals), wherein the channels of the first plurality of channelsconduct majority carriers of the first conductivity type. That is, atleast one of the plurality of electrical contact regions is notcomprised by the first subset. For example, the control terminal 840-1may be comprised by the first subset of the plurality of controlterminals. A first subset of the control terminals may, e.g., beconfigured to control a concentration of majority carriers of the firstconductivity type in associated wells of the second conductivity type.In the example of FIG. 8, the control terminal 840-1 is coupled to anassociated electrode 842-1 (e.g. made of low-ohmic poly-silicon) whichis arranged on an associated oxide layers 841-1 that is formed on thewell 830-1. The control terminal 840-1 may, e.g., cause the formation ofan inversion layer at the interface between the well 830-1 and the oxidelayer 841-1. Accordingly, a channel 850-1 conducting majority carriersof the first conductivity type is formed in well 830-1. That is, channel850-1 is formed in the semiconductor substrate 860 directly between theHall effect region 810 and the electrical contact region 820-1. Hence,an electrically conductive channel is formed between the Hall effectregion 110 and the electrical contact region 820-1 during the firstoperating phase.

The plurality of control terminals are further configured to form duringa second operating phase (e.g. a second spinning scheme) a secondplurality of channels in the semiconductor substrate 860 (directly)between the Hall effect region 810 and a second subset of the pluralityof electrical contact regions (e.g. by applying the first potential tothe respective control terminals), wherein the channels of the secondplurality of channels conduct majority carriers of the firstconductivity type. For example, a second subset of the control terminalsmay be configured to control a concentration of majority carriers of thefirst conductivity type in associated wells of the second conductivitytype. In the example of FIG. 8, the control terminal 840-2 is coupled toan associated electrode 842-2 (e.g. made of low-ohmic poly-silicon)which is arranged on an associated oxide layers 841-2 that is formed onthe well 830-2. The control terminal 840-2 may, e.g., cause theformation of an inversion layer at the interface between the well 830-2and the oxide layer 841-2. Accordingly, a channel 850-2 conduct majoritycarriers of the first conductivity type is formed in well 830-2. Thatis, channel 850-2 is formed in the semiconductor substrate 860 directlybetween the Hall effect region 810 and the electrical contact region820-2. Hence, an electrically conductive channel is formed between theHall effect region 110 and the electrical contact region 820-2 duringthe second operating phase.

In the Hall sensor device 800 no channel conducting majority carriers ofthe first conductivity type is formed in well 830-2 during the firstoperating phase, whereas no channel conducting majority carriers of thefirst conductivity type is formed in well 830-1 during the secondoperating phase. That is, single ones of the plurality of electricalcontact regions may be selectively activated and deactivated. Sincemerely a first subset of the plurality of electrical contact regions isactivated during the first operating phase and since merely a secondsubset of the plurality of electrical contact regions is activatedduring the second operating phase, short circuiting of the electricalsupply signal and short circuiting of the Hall effect region's outputsignal is reduced. The homogeneity of the electrical field and thecurrent/voltage distribution inside the Hall effect region 810 may,hence, be increased. Accordingly, the residual offset of the Hall sensordevice 800 may be reduced compared to conventional approaches.

In some examples, the Hall sensor device 800 may further comprisecombining circuitry (not illustrated) configured to combine theelectrical signals from the Hall effect region provided (tapped) by thefirst subset of the plurality of electrical contact regions during thefirst operating phase and the electrical signals from the Hall effectregion provided (tapped) by the first subset of the plurality ofelectrical contact regions during the second operating phase. Thecombined electrical signals from the Hall effect region 810 may form anoutput signal of the Hall sensor device 800. For example, the combiningcircuitry may be configured to linearly combine the electrical signalsfrom the Hall effect region for both operating phases (e.g. bothspinning schemes). In particular, the electrical signals from the Halleffect region 810 may be summed or subtracted from each other, whereinthe absolute value of the respective coefficients of the linearcombination is equal to one. Accordingly, the output signal of the Hallsensor device 800 may exhibit reduced residual offset compared toconventional approaches.

The plurality of electrical contract regions may in some examples bearranged at a peripheral portion of the Hall effect region 810 asindicated in FIG. 8.

In some examples, each electrical contact region of the second subset ofthe plurality of electrical contact regions may be arranged between twoelectrical contact regions of the first subset of the plurality ofelectrical contact regions, respectively. The electrical contact regionsof the first subset of the plurality of electrical contact regions mayfurther be rotated by 90° with respect to each other about a geometricalcenter of the Hall effect region 810.

For example, the plurality of electrical contact regions may be arrangedalong at least 75%, 80%, 85%, 90%, 95%, or more of the Hall effectregion's periphery. The plurality of electrical contact regions may insome examples be equal in size.

In some examples, none of the plurality of control terminals comprisedby the first subset may be comprised by the second subset.Alternatively, at least one of the plurality of control terminalscomprised by the first subset may be comprised by the second subset.

FIG. 9 illustrates a cross section of another Hall sensor device 900.The Hall sensor device 900 comprises a Hall effect region 910 of a firstconductivity type (e.g. n-doped). In the Hall effect region 910 the Halleffect takes place when an external magnetic field (not illustrated) ispresent.

The Hall sensor device 900 further comprises a plurality of electricalcontact regions configured to provide electrical signals to/from theHall effect region 910. For this purpose, the electrical contact regionsmay, e.g., be coupled to respective terminals (not illustrated). For thesake of simplicity, merely two electrical contact regions 920-1 and920-2 are illustrated. However, it is to be noted that any number ofelectrical contact regions may be provided. For example, 2, 3, 4, 8, 16,24, 32 or more electrical contact regions may be provided. Theelectrical contact regions may, e.g., be formed in respective wells of adifferent second conductivity type which adjoin the Hall effect region910. For example, electrical contact region 920-1 may be formed in well930-1 and electrical contact region 920-2 may be formed in well 930-2,wherein both wells 930-1 and 930-2 adjoin the Hall effect region 910(i.e. each well of the second conductivity type shares a common boundarywith the Hall effect region 910). For example, at least one (or all) ofthe plurality of electrical contact regions may be of the firstconductivity type. Alternatively, one or more of the plurality ofelectrical contact regions may be formed by a metal contact.

The Hall sensor device 900 further comprises circuitry 970 configured toselectively couple a first subset of the plurality of electrical contactregions to the Hall effect region during at least one first operatingphase (e.g. a first spinning scheme), and to selectively couple adifferent second subset of the plurality of electrical contact regionsto the Hall effect region during at least one second operating phase(e.g. a second spinning scheme). It is to be noted that at least one ofthe plurality of electrical contact regions is not comprised by thefirst subset.

The circuitry may, e.g., comprise terminals which are connected toelectrodes that are arranged on oxide layers on top of the wells of thesecond conductivity type (e.g. electrodes 942-1 and 942-2 arranged onoxide layers 941-1 and 941-2 on top of wells 930-1 and 930-2). Duringthe first operating phase, a control signal may be applied to selectedterminals in order to form a first plurality of channels between theHall effect region 910 and the first subset of the plurality ofelectrical contact regions, wherein the channels of the first pluralityof channels conduct majority carriers of the first conductivity type. Byapplying a control signal to a respective terminal, a conductance in theassociated well of the second conductivity type may be controlled. Forexample, the specific conductance of a channel which is formed in thewell of the second conductivity type may be controlled. In the exampleof FIG. 9, the circuitry 970 may, e.g., control the formation of aninversion layer at the interface between the well 930-1 and the oxidelayer 941-1. Accordingly, a channel 950-1 conduct majority carriers ofthe first conductivity type is formed in well 930-1. That is, aconductivity in the boundary region 980-1 between the Hall effect region910 and the electrical contact region 920-1 is substantially equal to,or higher than a conductivity in the Hall effect region 910 during thefirst operating phase.

During the second operating phase, a control signal may be applied toother selected terminals in order to form a second plurality of channelsbetween the Hall effect region 910 and the second subset of theplurality of electrical contact regions, wherein the channels of thefirst plurality of channels conduct majority carriers of the firstconductivity type. In the example of FIG. 9, the circuitry 970 may,e.g., control the formation of an inversion layer at the interfacebetween the well 930-2 and the oxide layer 941-2. Accordingly, a channel950-2 conducting majority carriers of the first conductivity type isformed in well 930-2. That is, a conductivity in the boundary region980-2 between the Hall effect region 910 and the electrical contactregion 920-2 is substantially equal to, or higher than a conductivity inthe Hall effect region 910 during the first operating phase.

On the other hand, the electrical contact region 920-2 exhibits a highohmic boundary condition to the Hall effect region 910 during the firstoperating phase since the channel 950-2 conducting majority carriers ofthe first conductivity type is merely formed during the second operatingphase. Hence, a conductivity in the boundary portion 980-2 between theelectrical contact region 920-2 and the Hall effect region 910 is atleast hundred times lower than the conductivity in the Hall effectregion 910 during the first operating phase. For the Hall effect region910, the electrical contact region 920-2 is effectively present onlyduring the second operating phase. The electrical contact region 920-2is effectively short-circuited to the Hall effect region 910 during thesecond operating phase. On the contrary, the electrical contact region920-2 is effectively absent for the Hall effect region 910 during thefirst operating phase. The boundary region 980-2 is, hence, effectivelyan isolating boundary between the electrical contact region 920-2 andthe Hall effect region 910 during the first operating phase.

Similarly, the electrical contact region 920-1 exhibits a high ohmicboundary condition to the Hall effect region 910 during the secondoperating phase since the channel 950-1 conducting majority carriers ofthe first conductivity type is merely formed during the first operatingphase. Hence, a conductivity in the boundary portion 980-1 between theelectrical contact region 920-1 and the Hall effect region 910 is atleast hundred times lower than the conductivity in the Hall effectregion 910 during the second operating phase. For the Hall effect region910, the electrical contact region 920-1 is effectively present onlyduring the first operating phase. The electrical contact region 920-1 iseffectively short-circuited to the Hall effect region 910 during thefirst operating phase. On the contrary, the electrical contact region920-1 is effectively absent for the Hall effect region 910 during thesecond operating phase. The boundary region 980-1 is, hence, effectivelyan isolating boundary between the electrical contact region 920-1 andthe Hall effect region 910 during the second operating phase.

Hence, regarding the plurality of electrical contact regions, each ofthe second subset of the plurality of electrical contact regionsexhibits a high ohmic boundary condition to the Hall effect regionduring the first operating phase, whereas each of the first subset ofthe plurality of electrical contact regions exhibits a high ohmicboundary condition to the Hall effect region during the second operatingphase.

That is, single ones of the plurality of electrical contact regions maybe selectively activated and deactivated. Since merely a first subset ofthe plurality of electrical contact regions is activated during thefirst operating phase and since merely a second subset of the pluralityof electrical contact regions is activated during the second operatingphase, short circuiting of the electrical supply signal and shortcircuiting of the Hall effect region's output signal is reduced. Thehomogeneity of the electrical field and the current/voltage distributioninside the Hall effect region 910 may, hence, be increased. Accordingly,the residual offset of the Hall sensor device 900 may be reducedcompared to conventional approaches.

In some examples, the Hall sensor device 900 may further comprisecombining circuitry (not illustrated) configured to combine theelectrical signals from the Hall effect region provided (tapped) by thefirst subset of the plurality of electrical contact regions during thefirst operating phase and the electrical signals from the Hall effectregion provided (tapped) by the first subset of the plurality ofelectrical contact regions during the second operating phase. Thecombined electrical signals from the Hall effect region 910 may form anoutput signal of the Hall sensor device 900. For example, the combiningcircuitry may be configured to linearly combine the electrical signalsfrom the Hall effect region for both operating phases (e.g. bothspinning schemes). In particular, the electrical signals from the Halleffect region may be summed or subtracted from each other, wherein theabsolute value of the respective coefficients of the linear combinationis equal to one. Accordingly, the output signal of the Hall sensordevice 900 may exhibit reduced residual offset compared to conventionalapproaches.

The plurality of electrical contract regions may in some examples bearranged at a peripheral portion of the Hall effect region 910 asindicated in FIG. 9.

In some examples, each electrical contact region of the second subset ofthe plurality of electrical contact regions may be arranged between twoelectrical contact regions of the first subset of the plurality ofelectrical contact regions, respectively. The electrical contact regionsof the first subset of the plurality of electrical contact regions mayfurther be rotated by 90° with respect to each other about a geometricalcenter of the Hall effect region 910.

For example, the plurality of electrical contact regions may be arrangedalong at least 75%, 80%, 85%, 90%, 95%, or more of the Hall effectregion's periphery. The plurality of electrical contact regions may insome examples be equal in size.

An example of a method 1000 for operating a Hall sensor device isillustrated by means of a flowchart in FIG. 10. The Hall sensor devicecomprises a Hall effect region of a first conductivity type and aplurality of electrical contact regions configured to provide electricalsignals to/from the Hall effect region using a plurality of controlterminals. Each electrical contact region is formed in a respective wellof a different second conductivity type which adjoins the Hall effectregion. Each control terminal is configured to control a conductance inan associated well of the second conductivity type. The method 1000comprises in a step 1002 selectively applying control signals to a firstsubset of the plurality of control terminals to form channels conductingmajority carriers of the first conductivity type in the associated wellsduring a first operating phase. Further, the method 1000 comprises astep 1004 of selectively applying control signals to a different secondsubset of the plurality of control terminals to form channels conductingmajority carriers of the first conductivity type in the associated wellsduring a second operating phase.

In some examples, the first operating phase comprises a full firstspinning scheme, and wherein the second operating phase comprises a fullsecond spinning scheme.

Optionally, the method 1000 further comprises a step 1006 of combiningthe electrical signals from the Hall effect region provided by the firstsubset of the plurality of electrical contact regions during the firstoperating phase and the electrical signals from the Hall effect regionprovided by the second subset of the plurality of electrical contactregions during the second operating phase to an output signal of theHall sensor device.

More details and aspects of the method are mentioned in connection withthe proposed concept or one or more examples described above (e.g. FIGS.1 to 7). The method may comprise one or more additional optionalfeatures corresponding to one or more aspects of the proposed concept orone or more examples described above.

An example of a method 1100 for a Hall sensor device comprising a Halleffect region is illustrated by means of a flowchart in FIG. 11. Themethod 1100 comprises in a step 1102 supplying electric energy to theHall effect region using a first pair of electrical contacts and tappingan output signal of the Hall effect region using a second pair ofelectrical contacts in a first operating phase. In a step 1104, themethod 1100 further comprises supplying electric energy to the Halleffect region using the second pair of electrical contacts and tappingan output signal of the Hall effect region using the first pair ofelectrical contacts in a second operating phase. Further, the method1100 comprises in a step 1106 supplying electric energy to the Halleffect region using a third pair of electrical contacts and tapping anoutput signal of the Hall effect region using a fourth pair ofelectrical contacts in a third operating phase. In a step 1108, themethod 1100 further comprises supplying electric energy to the Halleffect region using the fourth pair of electrical contacts and tappingan output signal of the Hall effect region using the third pair ofelectrical contacts in a fourth operating phase.

At least one electrical contact of the third and the fourth pair ofelectrical contacts exhibits a high ohmic boundary condition to the Halleffect region during the first operating phase, wherein at least oneelectrical contact of the first and the second pair of electricalcontacts exhibits a high ohmic boundary condition to the Hall effectregion during the second operating phase. As discussed above, in thehigh ohmic boundary condition a conductivity in a boundary portionbetween a respective electrical contact and the Hall effect region is atleast hundred times lower than a conductivity in the Hall effect region.

Optionally, the method 1100 further comprises a step 1110 of combiningthe output signals of the Hall effect region in the first operatingstate, the second operating state, third operating state and the fourthoperating state to generate an output signal of the Hall sensor device.

More details and aspects of the method are mentioned in connection withthe proposed concept or one or more examples described above (e.g. FIGS.6, 7 and 9). The method may comprise one or more additional optionalfeatures corresponding to one or more aspects of the proposed concept orone or more examples described above.

The aspects and features mentioned and described together with one ormore of the previously detailed examples and figures, may as well becombined with one or more of the other examples in order to replace alike feature of the other example or in order to additionally introducethe feature to the other example.

The description and drawings merely illustrate the principles of thedisclosure. It will thus be appreciated that those skilled in the artwill be able to devise various arrangements that, although notexplicitly described or shown herein, embody the principles of thedisclosure and are included within its spirit and scope. Furthermore,all examples recited herein are principally intended expressly to beonly for pedagogical purposes to aid the reader in understanding theprinciples of the disclosure and the concepts contributed by theinventor(s) to furthering the art, and are to be construed as beingwithout limitation to such specifically recited examples and conditions.Moreover, all statements herein reciting principles, aspects, andexamples of the disclosure, as well as specific examples thereof, areintended to encompass equivalents thereof.

A block diagram may, for instance, illustrate a high-level circuitdiagram implementing the principles of the disclosure. Similarly, a flowchart, a flow diagram, a state transition diagram, a pseudo code, andthe like may represent various processes, operations or steps, whichmay, for instance, be substantially represented in computer readablemedium and so executed by a computer or processor, whether or not suchcomputer or processor is explicitly shown. Methods disclosed in thespecification or in the claims may be implemented by a device havingmeans for performing each of the respective acts of these methods.

It is to be understood that the disclosure of multiple acts, processes,operations, steps or functions disclosed in the specification or claimsmay not be construed as to be within the specific order, unlessexplicitly or implicitly stated otherwise, for instance for technicalreasons. Therefore, the disclosure of multiple acts or functions willnot limit these to a particular order unless such acts or functions arenot interchangeable for technical reasons. Furthermore, in some examplesa single act, function, process, operation or step may include or may bebroken into multiple sub-acts, -functions, -processes, -operations or-steps, respectively. Such sub acts may be included and part of thedisclosure of this single act unless explicitly excluded.

Furthermore, the following claims are hereby incorporated into thedetailed description, where each claim may stand on its own as aseparate example. While each claim may stand on its own as a separateexample, it is to be noted that—although a dependent claim may refer inthe claims to a specific combination with one or more other claims—otherexample examples may also include a combination of the dependent claimwith the subject matter of each other dependent or independent claim.Such combinations are explicitly proposed herein unless it is statedthat a specific combination is not intended. Furthermore, it is intendedto include also features of a claim to any other independent claim evenif this claim is not directly made dependent to the independent claim.

What is claimed is:
 1. A Hall sensor device, comprising: a Hall effect region of a first conductivity type; a plurality of electrical contact regions configured to provide electrical signals to and from the Hall effect region, wherein each electrical contact region is formed in a respective well of a second conductivity type that adjoins the Hall effect region; and circuitry comprising a plurality of control terminals, wherein each control terminal is configured to control a conductance in an associated well of the second conductivity type, wherein the circuitry is configured to: selectively apply control signals to a first subset of the plurality of control terminals to form channels conducting majority carriers of the first conductivity type in the associated wells during a first operating phase, and selectively apply control signals to a different second subset of the plurality of control terminals to form channels conducting majority carriers of the first conductivity type in the associated wells during a second operating phase.
 2. The Hall sensor device of claim 1, wherein the first operating phase comprises a full first spinning scheme, and wherein the second operating phase comprises a full second spinning scheme.
 3. The Hall sensor device of claim 1, further comprising: combining circuitry configured to combine the electrical signals from the Hall effect region provided by the electrical contact regions during the first operating phase with the electrical signals from the Hall effect region provided by the electrical contact regions during the second operating phase to generate an output signal of the Hall sensor device.
 4. The Hall sensor device of claim 1, wherein the plurality of electrical contact regions are equal in size.
 5. The Hall sensor device of claim 1, wherein the plurality of electrical contact regions are arranged along at least 75% of a periphery of the Hall effect region.
 6. The Hall sensor device of claim 1, wherein the first subset of the plurality of control terminals and the second subset of the plurality of control terminals are mutually exclusive from each other.
 7. The Hall sensor device of any of claim 1, wherein at least one of the plurality of control terminals comprised by the first subset is comprised by the second subset.
 8. The Hall sensor device of claim 1, wherein at least one of the plurality of electrical contact regions is of the first conductivity type.
 9. The Hall sensor device of claim 1, wherein: the channels conducting the majority carriers of the first conductivity type in the associated wells during the first operating phase are formed between an associated first subset of the plurality of electrical contact regions and the Hall effect region, and the channels conducting the majority carriers of the first conductivity type in the associated wells during the second operating phase are formed between an associated second subset of the plurality of electrical contact regions and the Hall effect region.
 10. The Hall sensor device of any of claim 1, further comprising: a plurality of wells of the first conductivity type, each adjoining the Hall effect region and a respective well of the second conductivity type, wherein a concentration of majority carriers of the first conductivity type in the plurality of wells of the first conductivity type is higher than a concentration of majority carriers of the first conductivity type in the Hall effect region.
 11. The Hall sensor device of claim 10, wherein a thickness of each of the plurality of wells of the first conductivity type is 50% or more of a thickness of the Hall effect region.
 12. The Hall sensor device of claim 10, wherein: the channels conducting the majority carriers of the first conductivity type in the associated wells of the second conductivity type during the first operating phase are formed between an associated first subset of the plurality of electrical contact regions and an associated first subset of the plurality of wells of the first conductivity type, and the channels conducting the majority carriers of the first conductivity type in the associated wells of the second conductivity type during the second operating phase are formed between an associated second subset of the plurality of electrical contact regions and an associated second subset of the plurality of wells of the first conductivity type.
 13. The Hall sensor device of claim 9, wherein each electrical contact region of the second subset of the plurality of electrical contact regions is arranged between two electrical contact regions of the first subset of the plurality of electrical contact regions, respectively.
 14. The Hall sensor device of claim 9, wherein the first subset of the plurality of electrical contact regions are rotated by 90° with respect to each other about a geometrical center of the Hall effect region.
 15. A Hall sensor device, comprising: a Hall effect region of a first conductivity type implemented in a semiconductor substrate; a plurality of electrical contact regions implemented in the semiconductor substrate and configured to provide electrical signals to and from the Hall effect region; and a plurality of control terminals configured to form during a first operating phase a first plurality of channels in the semiconductor substrate between the Hall effect region and a first subset of the plurality of electrical contact regions which conduct majority carriers of the first conductivity type, and to form during a second operating phase a second plurality of channels in the semiconductor substrate between the Hall effect region and a different second subset of the plurality of electrical contact regions which conduct majority carriers of the first conductivity type.
 16. The Hall sensor device of claim 15, wherein: the first operating phase comprises a full first spinning scheme, and the second operating phase comprises a full second spinning scheme.
 17. The Hall sensor device of claim 15, further comprising: combining circuitry configured to combine the electrical signals from the Hall effect region provided by the first subset of the plurality of electrical contact regions during the first operating phase with the electrical signals from the Hall effect region provided by the second subset of the plurality of electrical contact regions during the second operating phase to generate an output signal of the Hall sensor device.
 18. A Hall sensor device, comprising: a Hall effect region; a plurality of electrical contact regions configured to provide electrical signals to and from the Hall effect region; and circuitry configured to selectively couple a first subset of the plurality of electrical contact regions to the Hall effect region during at least one first operating phase, and to selectively couple a different second subset of the plurality of electrical contact regions to the Hall effect region during at least one second operating phase, wherein each of the second subset of the plurality of electrical contact regions exhibits a high ohmic boundary condition to the Hall effect region during the first operating phase, and wherein each of the first subset of the plurality of electrical contact regions exhibits a high ohmic boundary condition to the Hall effect region during the second operating phase.
 19. The Hall sensor device according to claim 18, wherein in the high ohmic boundary condition a conductivity in a boundary portion between a respective electrical contact region and the Hall effect region is at least hundred times lower than a conductivity in the Hall effect region.
 20. The Hall sensor device of claim 18, wherein: the first operating phase comprises a full first spinning scheme, and the second operating phase comprises a full second spinning scheme.
 21. The Hall sensor device of claim 18, further comprising: combining circuitry configured to combine the electrical signals from the Hall effect region provided by the first subset of the plurality of electrical contact regions during the first operating phase with the electrical signals from the Hall effect region provided by the second subset of the plurality of electrical contact regions during the second operating phase to generate an output signal of the Hall sensor device. 